A novel area efficient floating field limiting ring edge termination technique
Souza, M M De, Bose, J V SubhasChandra, Narayanan, E M Sankara, Pease, T J, Ensell, G J and Humphry, J (2000) A novel area efficient floating field limiting ring edge termination technique Solid State Electronics, 44, (8), pp. 1381-1386.
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In this paper, a floating ring edge termination structure using minimally sized lightly doped p-rings is proposed. A novel embodiment of the structure involves placement of shallow p(+)-regions offset from the centre of each of the p-well rings to reduce peak electric field at the surface and to reduce sensitivity to oxide interface charges. The structures have been fabricated using an advanced, 2 kV MOS-bipolar process technology. A close match between the simulated and experimental results validates the proposed structure.
|Keywords:||BREAKDOWN VOLTAGE, PLANAR DEVICES, PLATE|
|Organisations:||Nanoelectronics and Nanotechnology|
|Date Deposited:||23 Feb 2007|
|Last Modified:||17 Apr 2017 19:50|
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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A novel area efficient floating field limiting ring edge termination technique (deposited 01 May 2001)
- A novel area efficient floating field limiting ring edge termination technique (deposited 23 Feb 2007) [Currently Displayed]
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