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Instability in Si(110) etched with tetramethyl ammonium hydroxide

Moktadir, Z and Sato, K (2001) Instability in Si(110) etched with tetramethyl ammonium hydroxide Journal of Applied Physics, 89, p. 3242.

Record type: Article


Experimental data for the morphological evolution of etched Si(110) is presented. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching which leads to the formation of elliptical hollows on the surface. The early stage of the formation of hollows can be explained by a linear theory similar to that which describes the early stage of spinodal decomposition. This instability is caused by anisotropic surface tension.

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Published date: 2001
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 263747
PURE UUID: 5e29469d-4130-4979-89e7-c05da685245d

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Date deposited: 26 Mar 2007
Last modified: 24 Jul 2017 16:41

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Author: Z Moktadir
Author: K Sato

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