Wavelet characterization of the submicron surface roughness of anisotropically etched silicon
Wavelet characterization of the submicron surface roughness of anisotropically etched silicon
The roughness of etched Si(1 10) surfaces in tetra-methyl ammonium hydroxide has been characterized using the wavelet transform formalism. Wavelet coefficients corresponding to the experimental surface profiles have been calculated and the roughness exponent has been derived using the scalegram method. Its value has been found to be 0.5.
L57-L62
Moktadir, Z.
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K.
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219
December 2000
Moktadir, Z.
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K.
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219
Moktadir, Z. and Sato, K.
(2000)
Wavelet characterization of the submicron surface roughness of anisotropically etched silicon.
Surface Science, 470 (1-2), .
(doi:10.1016/S0039-6028(00)00895-5).
Abstract
The roughness of etched Si(1 10) surfaces in tetra-methyl ammonium hydroxide has been characterized using the wavelet transform formalism. Wavelet coefficients corresponding to the experimental surface profiles have been calculated and the roughness exponent has been derived using the scalegram method. Its value has been found to be 0.5.
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Published date: December 2000
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263786
URI: http://eprints.soton.ac.uk/id/eprint/263786
ISSN: 0039-6028
PURE UUID: 96a75571-1c5e-428d-b6eb-4ea24b3f2f33
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Date deposited: 28 Mar 2007
Last modified: 14 Mar 2024 07:37
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Author:
Z. Moktadir
Author:
K. Sato
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