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Wavelet Characterization of the submicron surface roughness of anisotropocally etched silicon

Moktadir, Z and Sato, K (2000) Wavelet Characterization of the submicron surface roughness of anisotropocally etched silicon Surface Science, 470, L57-L62.

Record type: Article

Abstract

The roughness of etched Si(1 10) surfaces in tetra-methyl ammonium hydroxide has been characterized using the wavelet transform formalism. Wavelet coefficients corresponding to the experimental surface profiles have been calculated and the roughness exponent has been derived using the scalegram method. Its value has been found to be 0.5.

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More information

Published date: 2000
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263786
URI: http://eprints.soton.ac.uk/id/eprint/263786
ISSN: 0039-6028
PURE UUID: 96a75571-1c5e-428d-b6eb-4ea24b3f2f33

Catalogue record

Date deposited: 28 Mar 2007
Last modified: 18 Jul 2017 07:42

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Contributors

Author: Z Moktadir
Author: K Sato

University divisions

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