The University of Southampton
University of Southampton Institutional Repository

Monte Carlo Simulation of wet etching of silicon: Investigation of (111) surface properties

Monte Carlo Simulation of wet etching of silicon: Investigation of (111) surface properties
Monte Carlo Simulation of wet etching of silicon: Investigation of (111) surface properties
The etching rate of the Si<111> surface family is of prime importance for micro-fabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of <111> surfaces remains unclear. In this paper the Monte Carlo simulation results obtained from etching of Si(111) small size substrates are presented. Simulations were carried out to simulate the behaviour of the <111> surface in contact with strong base aqueous solutions (R - OH). Simulation shows that when etching a small substrate (200 A X 200 A), the etch depth against time curve shows a constant part and a linear part. The former is related to the magnitude of Monte Carlo time steps while the latter corresponds to the evacuation of one sublayer. However, the substrate size fails to impact the etching mechanism which remains unchanged even for an infinite size. The same remark applies to roughness which exhibits a series of alternative peaks.
481-488
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9

Moktadir, Z and Camon, H (1997) Monte Carlo Simulation of wet etching of silicon: Investigation of (111) surface properties. Modelling Simul. Mater. Sci. Eng., 5, 481-488.

Record type: Article

Abstract

The etching rate of the Si<111> surface family is of prime importance for micro-fabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of <111> surfaces remains unclear. In this paper the Monte Carlo simulation results obtained from etching of Si(111) small size substrates are presented. Simulations were carried out to simulate the behaviour of the <111> surface in contact with strong base aqueous solutions (R - OH). Simulation shows that when etching a small substrate (200 A X 200 A), the etch depth against time curve shows a constant part and a linear part. The former is related to the magnitude of Monte Carlo time steps while the latter corresponds to the evacuation of one sublayer. However, the substrate size fails to impact the etching mechanism which remains unchanged even for an infinite size. The same remark applies to roughness which exhibits a series of alternative peaks.

This record has no associated files available for download.

More information

Published date: 1997
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263788
URI: http://eprints.soton.ac.uk/id/eprint/263788
PURE UUID: faaf5740-651e-430e-b13d-48c1efd1e96c

Catalogue record

Date deposited: 28 Mar 2007
Last modified: 08 Jan 2022 14:49

Export record

Contributors

Author: Z Moktadir
Author: H Camon

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×