Simulation of silicon etching with KOH
Simulation of silicon etching with KOH
Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram and compared to available experimental data. Finally, an analytical description of etch rate ratios is proposed.
509-517
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
1997
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Camon, H and Moktadir, Z
(1997)
Simulation of silicon etching with KOH.
Microelectronics Journal, 28, .
Abstract
Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram and compared to available experimental data. Finally, an analytical description of etch rate ratios is proposed.
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Published date: 1997
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263805
URI: http://eprints.soton.ac.uk/id/eprint/263805
ISSN: 0026-2692
PURE UUID: 479f4ed1-0b33-44be-a19b-04628e216987
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Date deposited: 29 Mar 2007
Last modified: 08 Jan 2022 17:46
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Contributors
Author:
H Camon
Author:
Z Moktadir
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