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Simulation of silicon etching with KOH

Camon, H and Moktadir, Z (1997) Simulation of silicon etching with KOH Microelectronics Journal, 28, pp. 509-517.

Record type: Article

Abstract

Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram and compared to available experimental data. Finally, an analytical description of etch rate ratios is proposed.

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More information

Published date: 1997
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263805
URI: http://eprints.soton.ac.uk/id/eprint/263805
ISSN: 0026-2692
PURE UUID: 479f4ed1-0b33-44be-a19b-04628e216987

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Date deposited: 29 Mar 2007
Last modified: 18 Jul 2017 07:42

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Contributors

Author: H Camon
Author: Z Moktadir

University divisions

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