The University of Southampton
University of Southampton Institutional Repository

Simulation of silicon etching with KOH

Camon, H and Moktadir, Z (1997) Simulation of silicon etching with KOH Microelectronics Journal, 28, pp. 509-517.

Record type: Article


Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram and compared to available experimental data. Finally, an analytical description of etch rate ratios is proposed.

Full text not available from this repository.

More information

Published date: 1997
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 263805
ISSN: 0026-2692
PURE UUID: 479f4ed1-0b33-44be-a19b-04628e216987

Catalogue record

Date deposited: 29 Mar 2007
Last modified: 18 Jul 2017 07:42

Export record


Author: H Camon
Author: Z Moktadir

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton:

ePrints Soton supports OAI 2.0 with a base URL of

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.