Simulation of silicon etching with KOH

Camon, H and Moktadir, Z (1997) Simulation of silicon etching with KOH Microelectronics Journal, 28, pp. 509-517.


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Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram and compared to available experimental data. Finally, an analytical description of etch rate ratios is proposed.

Item Type: Article
ISSNs: 0026-2692 (print)
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 263805
Date :
Date Event
Date Deposited: 29 Mar 2007
Last Modified: 17 Apr 2017 19:47
Further Information:Google Scholar

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