New trends in atomic scale simulation of wet chemical etching of silicon with KOH
New trends in atomic scale simulation of wet chemical etching of silicon with KOH
A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for (110) and (111) surfaces.
142-145
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Rouhanie, M. D.
c42153e9-e56a-4ee0-8889-5e8f27634d79
1996
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Rouhanie, M. D.
c42153e9-e56a-4ee0-8889-5e8f27634d79
Camon, H, Moktadir, Z and Rouhanie, M. D.
(1996)
New trends in atomic scale simulation of wet chemical etching of silicon with KOH.
Materials Science & Eng. B, 37, .
Abstract
A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for (110) and (111) surfaces.
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Published date: 1996
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263806
URI: http://eprints.soton.ac.uk/id/eprint/263806
PURE UUID: 818359aa-f787-4e82-b3f8-a92f7a926f18
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Date deposited: 29 Mar 2007
Last modified: 08 Jan 2022 11:52
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Contributors
Author:
H Camon
Author:
Z Moktadir
Author:
M. D. Rouhanie
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