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New trends in atomic scale simulation of wet chemical etching of silicon with KOH

New trends in atomic scale simulation of wet chemical etching of silicon with KOH
New trends in atomic scale simulation of wet chemical etching of silicon with KOH
A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for (110) and (111) surfaces.
142-145
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Rouhanie, M. D.
c42153e9-e56a-4ee0-8889-5e8f27634d79
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Rouhanie, M. D.
c42153e9-e56a-4ee0-8889-5e8f27634d79

Camon, H, Moktadir, Z and Rouhanie, M. D. (1996) New trends in atomic scale simulation of wet chemical etching of silicon with KOH. Materials Science & Eng. B, 37, 142-145.

Record type: Article

Abstract

A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for (110) and (111) surfaces.

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More information

Published date: 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263806
URI: http://eprints.soton.ac.uk/id/eprint/263806
PURE UUID: 818359aa-f787-4e82-b3f8-a92f7a926f18

Catalogue record

Date deposited: 29 Mar 2007
Last modified: 08 Jan 2022 11:52

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Contributors

Author: H Camon
Author: Z Moktadir
Author: M. D. Rouhanie

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