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New trends in atomic scale simulation of wet chemical etching of silicon with KOH

Camon, H, Moktadir, Z and Rouhanie, M. D. (1996) New trends in atomic scale simulation of wet chemical etching of silicon with KOH Materials Science & Eng. B, 37, pp. 142-145.

Record type: Article

Abstract

A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for (110) and (111) surfaces.

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More information

Published date: 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263806
URI: http://eprints.soton.ac.uk/id/eprint/263806
PURE UUID: 818359aa-f787-4e82-b3f8-a92f7a926f18

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Date deposited: 29 Mar 2007
Last modified: 18 Jul 2017 07:42

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Contributors

Author: H Camon
Author: Z Moktadir
Author: M. D. Rouhanie

University divisions

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