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Atomic scale simulation of silicon etched in aqueous KOH solution

Camon, H and Moktadir, Z (1995) Atomic scale simulation of silicon etched in aqueous KOH solution Sensors and Actuators A: Physical, 46, pp. 27-29.

Record type: Article

Abstract

In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implementation. We present results for <hk0> oriented surfaces like etching rates, and more detailed results for low-index surfaces such as <100> and <111>. For these two directions we present results concerning the surface morphology and the time evolution of the roughness.

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More information

Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263813
URI: http://eprints.soton.ac.uk/id/eprint/263813
ISSN: 0924-4247
PURE UUID: 132712d3-19e3-4d48-994a-fc75d56724aa

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Date deposited: 30 Mar 2007
Last modified: 18 Jul 2017 07:42

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Contributors

Author: H Camon
Author: Z Moktadir

University divisions

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