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Atomic scale simulation of silicon etched in aqueous KOH solution

Atomic scale simulation of silicon etched in aqueous KOH solution
Atomic scale simulation of silicon etched in aqueous KOH solution
In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implementation. We present results for <hk0> oriented surfaces like etching rates, and more detailed results for low-index surfaces such as <100> and <111>. For these two directions we present results concerning the surface morphology and the time evolution of the roughness.
0924-4247
27-29
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4

Camon, H and Moktadir, Z (1995) Atomic scale simulation of silicon etched in aqueous KOH solution. Sensors and Actuators A: Physical, 46, 27-29.

Record type: Article

Abstract

In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implementation. We present results for <hk0> oriented surfaces like etching rates, and more detailed results for low-index surfaces such as <100> and <111>. For these two directions we present results concerning the surface morphology and the time evolution of the roughness.

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More information

Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263813
URI: http://eprints.soton.ac.uk/id/eprint/263813
ISSN: 0924-4247
PURE UUID: 132712d3-19e3-4d48-994a-fc75d56724aa

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Date deposited: 30 Mar 2007
Last modified: 10 Dec 2021 21:40

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Contributors

Author: H Camon
Author: Z Moktadir

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