Atomic scale simulation of silicon anisotropic chemical etching
Atomic scale simulation of silicon anisotropic chemical etching
163-167
Camon, H
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Rouhanie, M D
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Esteve, D
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Gue, A M
25e2b74d-e240-4d52-9376-0fb37a877e6e
Moktadir, Z
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1995
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Rouhanie, M D
d2f38691-3fe2-4bed-9631-d452476fd391
Esteve, D
d7a07d4d-ea9f-4079-b550-ff1be4729072
Gue, A M
25e2b74d-e240-4d52-9376-0fb37a877e6e
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Camon, H, Rouhanie, M D, Esteve, D, Gue, A M and Moktadir, Z
(1995)
Atomic scale simulation of silicon anisotropic chemical etching.
Microsystem Technologies, 1, .
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More information
Published date: 1995
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263814
URI: http://eprints.soton.ac.uk/id/eprint/263814
ISSN: 0946-7076
PURE UUID: e4c23531-c898-4abe-a001-be1c2d571dda
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Date deposited: 30 Mar 2007
Last modified: 10 Dec 2021 21:40
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Contributors
Author:
H Camon
Author:
M D Rouhanie
Author:
D Esteve
Author:
A M Gue
Author:
Z Moktadir
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