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Atomic scale simulation of silicon anisotropic chemical etching

Atomic scale simulation of silicon anisotropic chemical etching
Atomic scale simulation of silicon anisotropic chemical etching
0946-7076
163-167
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Rouhanie, M D
d2f38691-3fe2-4bed-9631-d452476fd391
Esteve, D
d7a07d4d-ea9f-4079-b550-ff1be4729072
Gue, A M
25e2b74d-e240-4d52-9376-0fb37a877e6e
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Rouhanie, M D
d2f38691-3fe2-4bed-9631-d452476fd391
Esteve, D
d7a07d4d-ea9f-4079-b550-ff1be4729072
Gue, A M
25e2b74d-e240-4d52-9376-0fb37a877e6e
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4

Camon, H, Rouhanie, M D, Esteve, D, Gue, A M and Moktadir, Z (1995) Atomic scale simulation of silicon anisotropic chemical etching. Microsystem Technologies, 1, 163-167.

Record type: Article

Full text not available from this repository.

More information

Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263814
URI: https://eprints.soton.ac.uk/id/eprint/263814
ISSN: 0946-7076
PURE UUID: e4c23531-c898-4abe-a001-be1c2d571dda

Catalogue record

Date deposited: 30 Mar 2007
Last modified: 18 Jul 2017 07:42

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