Unstable Etching Of Si(110) With Potassium Hydroxide

Moktadir, Z, Sato, K, Shimizu, T and Shikida, M (2000) Unstable Etching Of Si(110) With Potassium Hydroxide. Materials Research Society, Boston, United States. EE5.27.1-EE5.27.6 .

Record type: Conference or Workshop Item (Paper)

Abstract

We present the experimental data for the morphological evolution of Si(110) etched with Potassium Hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching, which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.

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Published date: 2000

Additional Information: Event Dates: December 2000

Venue - Dates: Materials Research Society, Boston, United States, 2000-12-01

Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263850

URI: http://eprints.soton.ac.uk/id/eprint/263850

PURE UUID: 747f1502-c0db-41d5-8cb2-027fc0cd2efd

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Date deposited: 04 Apr 2007

Last modified: 10 Dec 2021 21:40

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Contributors

Author: Z Moktadir

Author: K Sato

Author: T Shimizu

Author: M Shikida

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