Unstable Etching Of Si(110) With Potassium Hydroxide

Moktadir, Z, Sato, K, Shimizu, T and Shikida, M (2000) Unstable Etching Of Si(110) With Potassium Hydroxide At Materials Research Society, United States. , EE5.27.1-EE5.27.6.


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We present the experimental data for the morphological evolution of Si(110) etched with Potassium Hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching, which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Event Dates: December 2000
Venue - Dates: Materials Research Society, United States, 2000-12-01
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 263850
Date :
Date Event
Date Deposited: 04 Apr 2007
Last Modified: 17 Apr 2017 19:47
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/263850

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