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Unstable Etching Of Si(110) With Potassium Hydroxide

Moktadir, Z, Sato, K, Shimizu, T and Shikida, M (2000) Unstable Etching Of Si(110) With Potassium Hydroxide At Materials Research Society, United States. , EE5.27.1-EE5.27.6.

Record type: Conference or Workshop Item (Paper)


We present the experimental data for the morphological evolution of Si(110) etched with Potassium Hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching, which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.

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Published date: 2000
Additional Information: Event Dates: December 2000
Venue - Dates: Materials Research Society, United States, 2000-12-01
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 263850
PURE UUID: 747f1502-c0db-41d5-8cb2-027fc0cd2efd

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Date deposited: 04 Apr 2007
Last modified: 18 Jul 2017 07:42

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Author: Z Moktadir
Author: K Sato
Author: T Shimizu
Author: M Shikida

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