Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide
Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219
2000
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219
Moktadir, Z and Sato, K
(2000)
Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide.
Physical chemistry of wet chemical etching of silicon workshop, Toulouse, France.
14 - 16 May 2000.
Record type:
Conference or Workshop Item
(Other)
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Published date: 2000
Additional Information:
Event Dates: May 15-17
Venue - Dates:
Physical chemistry of wet chemical etching of silicon workshop, Toulouse, France, 2000-05-14 - 2000-05-16
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263851
URI: http://eprints.soton.ac.uk/id/eprint/263851
PURE UUID: c936d745-7d5e-4d2a-aff7-bf545f24bc32
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Date deposited: 04 Apr 2007
Last modified: 10 Dec 2021 21:40
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Contributors
Author:
Z Moktadir
Author:
K Sato
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