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Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide

Moktadir, Z and Sato, K (2000) Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide At Physical chemistry of wet chemical etching of silicon workshop, France. 15 - 17 May 2000.

Record type: Conference or Workshop Item (Other)

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More information

Published date: 2000
Additional Information: Event Dates: May 15-17
Venue - Dates: Physical chemistry of wet chemical etching of silicon workshop, France, 2000-05-15 - 2000-05-17
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263851
URI: http://eprints.soton.ac.uk/id/eprint/263851
PURE UUID: c936d745-7d5e-4d2a-aff7-bf545f24bc32

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Date deposited: 04 Apr 2007
Last modified: 18 Jul 2017 07:42

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Contributors

Author: Z Moktadir
Author: K Sato

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