Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide


Moktadir, Z and Sato, K (2000) Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide At Physical chemistry of wet chemical etching of silicon workshop, France. 15 - 17 May 2000.

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Item Type: Conference or Workshop Item (Other)
Additional Information: Event Dates: May 15-17
Venue - Dates: Physical chemistry of wet chemical etching of silicon workshop, France, 2000-05-15 - 2000-05-17
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 263851
Date :
Date Event
2000Published
Date Deposited: 04 Apr 2007
Last Modified: 17 Apr 2017 19:47
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/263851

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