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Roughness characterization of Si(110) etched in TMAH by Atomic Force Microscopy

Roughness characterization of Si(110) etched in TMAH by Atomic Force Microscopy
Roughness characterization of Si(110) etched in TMAH by Atomic Force Microscopy
305-309
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219

Moktadir, Z and Sato, K (1999) Roughness characterization of Si(110) etched in TMAH by Atomic Force Microscopy. Materials Research society, Boston MA, United States. pp. 305-309 .

Record type: Conference or Workshop Item (Paper)

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More information

Published date: 1999
Additional Information: Event Dates: December 1999
Venue - Dates: Materials Research society, Boston MA, United States, 1999-12-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263852
URI: http://eprints.soton.ac.uk/id/eprint/263852
PURE UUID: 9cc3ea7a-ec22-4a78-889b-31579ec12185

Catalogue record

Date deposited: 04 Apr 2007
Last modified: 10 Dec 2021 21:40

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Contributors

Author: Z Moktadir
Author: K Sato

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