Atomic scale Monte Carlo simulation of anisotropic etching of silicon
Atomic scale Monte Carlo simulation of anisotropic etching of silicon
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Rouhanie, M D
d2f38691-3fe2-4bed-9631-d452476fd391
1998
Camon, H
0d9898b1-07c7-471b-b8df-fe0d131c49e9
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Rouhanie, M D
d2f38691-3fe2-4bed-9631-d452476fd391
Camon, H, Moktadir, Z and Rouhanie, M D
(1998)
Atomic scale Monte Carlo simulation of anisotropic etching of silicon.
Physical chemistry of wet chemical etching of silicon Workshop, Holten, The, Netherlands.
16 - 18 May 1998.
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Conference or Workshop Item
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Published date: 1998
Additional Information:
Event Dates: May 17-19
Venue - Dates:
Physical chemistry of wet chemical etching of silicon Workshop, Holten, The, Netherlands, 1998-05-16 - 1998-05-18
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263853
URI: http://eprints.soton.ac.uk/id/eprint/263853
PURE UUID: d032d656-1493-493d-992b-0fca3e0aee51
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Date deposited: 04 Apr 2007
Last modified: 10 Dec 2021 21:40
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Contributors
Author:
H Camon
Author:
Z Moktadir
Author:
M D Rouhanie
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