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The role of tunnel barriers in Phase-State Low Electron-Number Drive Transistors (PLEDTRs)

Mizuta, Hiroshi, Wagner, Mathias and Nakazato, Kazuo (2001) The role of tunnel barriers in Phase-State Low Electron-Number Drive Transistors (PLEDTRs) IEE Trans Electron Devices, 48, (6), pp. 1103-1108.

Record type: Article

Abstract

This paper presents a numerical analysis of the role of tunnel barriers in explaining the experimental I-V characteristics of a new vertical tunnel transistor called Phase-state Low Electron-number Drive Transistor (PLEDTR), used for constructing a high-speed and high-capacity gain cell. Introducing the characteristic features of tunneling current through ultrathin barriers into a standard two-dimensional (2-D) drift-diffusion (DD) device simulator by way of calibrating it with a self-consistent one-dimensional (1-D) Poisson/Shrodinger equation solver, it is shown that the transistor characteristics on the ON-state are substantially affected by the thickness of the source barrier. Asymmetric source and drain barrier (SDBs)structures are found to be responsible for the large asymmetry of the I-V characteristics at large source-drain voltages found experimentally. It is also shown that the central shutter barriers (CSBs) reduce the overall drain current in the sub-threshold regime, leading to superior OFF current characteristics.

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More information

Published date: June 2001
Keywords: Semiconductor device modelling, semiconductor memories, tunnel transistors, tunneling
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 264336
URI: http://eprints.soton.ac.uk/id/eprint/264336
PURE UUID: e2831443-793e-4572-8fca-7789951bb714

Catalogue record

Date deposited: 24 Jul 2007
Last modified: 18 Jul 2017 07:37

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Contributors

Author: Hiroshi Mizuta
Author: Mathias Wagner
Author: Kazuo Nakazato

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