Switching of Single-Electron Oscillations in Dual-Gated Nanocrystalline Silicon Point-Contact Transistors
Switching of Single-Electron Oscillations in Dual-Gated Nanocrystalline Silicon Point-Contact Transistors
Switching of single-electron transport is observed in point-contact transistors fabricated in nanocrystalline silicon thin films, where the grain size is ~10-40nm. The effects may be associated with electrostatic coupling between the grains. At 4.2K, single-electron oscillations in the device current are switched as a function of the voltages on two separate gates. This is investigated further using single-electron Monte Carlo simulation of a model with two charging grains in parallel and intergrain capacitive coupling A change in the electron number of a grain occurs due to charging of the other grain by a single electron, causing bistable regions in charge stability versus gate voltage. These effects depend not only on the coupling capacitance but also on the cross capacitances between the grains and the two gates.
Coulomb-blockade, nanocrystalline silicon, quantum dot, single-electron transistor
271-276
Khalafalla, Mohammed A H
aeb78f6e-e526-416a-8274-473476a887f0
Durrani, Zahid Ali Khan
1a707ce1-ca14-440e-88fb-6241c3b8490e
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
December 2003
Khalafalla, Mohammed A H
aeb78f6e-e526-416a-8274-473476a887f0
Durrani, Zahid Ali Khan
1a707ce1-ca14-440e-88fb-6241c3b8490e
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Khalafalla, Mohammed A H, Durrani, Zahid Ali Khan and Mizuta, Hiroshi
(2003)
Switching of Single-Electron Oscillations in Dual-Gated Nanocrystalline Silicon Point-Contact Transistors.
IEEE Trans Nanotechnology, 2 (4), .
Abstract
Switching of single-electron transport is observed in point-contact transistors fabricated in nanocrystalline silicon thin films, where the grain size is ~10-40nm. The effects may be associated with electrostatic coupling between the grains. At 4.2K, single-electron oscillations in the device current are switched as a function of the voltages on two separate gates. This is investigated further using single-electron Monte Carlo simulation of a model with two charging grains in parallel and intergrain capacitive coupling A change in the electron number of a grain occurs due to charging of the other grain by a single electron, causing bistable regions in charge stability versus gate voltage. These effects depend not only on the coupling capacitance but also on the cross capacitances between the grains and the two gates.
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IEEE_TNano2_271_2003.pdf
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Published date: December 2003
Keywords:
Coulomb-blockade, nanocrystalline silicon, quantum dot, single-electron transistor
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 264337
URI: http://eprints.soton.ac.uk/id/eprint/264337
PURE UUID: d828a2eb-53b6-437e-a909-a011425610fc
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Date deposited: 24 Jul 2007
Last modified: 14 Mar 2024 07:47
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Contributors
Author:
Mohammed A H Khalafalla
Author:
Zahid Ali Khan Durrani
Author:
Hiroshi Mizuta
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