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Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers

Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers
Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers
Electronic and phononic states and their interactions in one-dimensional arrays of Si quantum dots interconnected with thin oxide layers is theoretically investigated. Electronic states under low electric field condition are obtained in the Kronig-Penny potential. Approximate expression for phonon wave functions is developed and numerically calculated using the linear atomic chain model. Simulated dispersion relation shows acoustic phonon modes, phonon band gaps, and confined optical phonon modes. Electron-phonon scattering rate is written using a one-dimensional expression. Intraminiband scattering rates and energy relaxation rates are simulated both for absorption and emission processes. The scattering rate varies from ~1012 to ~ 1014, depending on the initial electron energy. The scattering rate for absorption/emission processes rapidly decreases at near the top/bottom of minibands due to limited number of phonon branches that can mediate the scattering processes. Negative energy relaxation rate is observed near the bottom of minibands, which is due to larger scattering rate for absorption process and smaller phonon energy mediating the scatterings for emission process. The scattering rate for absorption decreases rapidly with decreasing temperature. Once the temperature drops down to 100K, the energy relaxation rate for emission process dominates the absorption process.
1550-235X
35337
Uno, S.
ad5d0b8f-4180-46db-b7e8-4d38c4d0bc61
Mori, N.
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Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Koshida, N.
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Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Uno, S.
ad5d0b8f-4180-46db-b7e8-4d38c4d0bc61
Mori, N.
5909cd97-a3bb-4da9-877c-dc2f368e06dd
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Koshida, N.
4dfd7d69-bba7-4a07-b428-97f917dc1a15
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Uno, S., Mori, N., Nakazato, K., Koshida, N. and Mizuta, Hiroshi (2005) Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers. Physical Review B, B72, 35337.

Record type: Article

Abstract

Electronic and phononic states and their interactions in one-dimensional arrays of Si quantum dots interconnected with thin oxide layers is theoretically investigated. Electronic states under low electric field condition are obtained in the Kronig-Penny potential. Approximate expression for phonon wave functions is developed and numerically calculated using the linear atomic chain model. Simulated dispersion relation shows acoustic phonon modes, phonon band gaps, and confined optical phonon modes. Electron-phonon scattering rate is written using a one-dimensional expression. Intraminiband scattering rates and energy relaxation rates are simulated both for absorption and emission processes. The scattering rate varies from ~1012 to ~ 1014, depending on the initial electron energy. The scattering rate for absorption/emission processes rapidly decreases at near the top/bottom of minibands due to limited number of phonon branches that can mediate the scattering processes. Negative energy relaxation rate is observed near the bottom of minibands, which is due to larger scattering rate for absorption process and smaller phonon energy mediating the scatterings for emission process. The scattering rate for absorption decreases rapidly with decreasing temperature. Once the temperature drops down to 100K, the energy relaxation rate for emission process dominates the absorption process.

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Published date: 2005
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 264338
URI: http://eprints.soton.ac.uk/id/eprint/264338
ISSN: 1550-235X
PURE UUID: a3b82f56-1567-495b-a3c7-8ca02a8afb03

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Date deposited: 24 Jul 2007
Last modified: 14 Mar 2024 07:47

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Contributors

Author: S. Uno
Author: N. Mori
Author: K. Nakazato
Author: N. Koshida
Author: Hiroshi Mizuta

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