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The effect of self-affine fractal roughness of wires on atom chips

The effect of self-affine fractal roughness of wires on atom chips
The effect of self-affine fractal roughness of wires on atom chips
Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom–surface interaction experiments.
0950-0340
2149-2160
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Darquie, B
cb1ba053-a1aa-4cf7-9746-d9c3216fbe2f
Kraft, M
54927621-738f-4d40-af56-a027f686b59f
Hinds, E. A.
565085f6-8db8-4849-8e25-71e2922911e1
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Darquie, B
cb1ba053-a1aa-4cf7-9746-d9c3216fbe2f
Kraft, M
54927621-738f-4d40-af56-a027f686b59f
Hinds, E. A.
565085f6-8db8-4849-8e25-71e2922911e1

Moktadir, Z, Darquie, B, Kraft, M and Hinds, E. A. (2007) The effect of self-affine fractal roughness of wires on atom chips. Journal of Modern Optics, 54 (13-15), 2149-2160. (doi:10.1080/09500340701427151).

Record type: Article

Abstract

Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom–surface interaction experiments.

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Published date: 2007
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 264635
URI: http://eprints.soton.ac.uk/id/eprint/264635
ISSN: 0950-0340
PURE UUID: 361bb662-d65d-44e6-a704-ab81faab8f77

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Date deposited: 04 Oct 2007
Last modified: 14 Mar 2024 07:54

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Contributors

Author: Z Moktadir
Author: B Darquie
Author: M Kraft
Author: E. A. Hinds

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