Highly compact asymmetric Mach-Zehnder device based on channel guides in 2D photonic crystal
Highly compact asymmetric Mach-Zehnder device based on channel guides in 2D photonic crystal
We have designed and fabricated a 2D photonic crystal (PhC) asymmetric Mach–Zehnder (M-Z) device structure using W1 channel waveguides oriented along Γ퐾 directions in silicon-on-insulator material. The asymmetric structure was designed using a PhC lattice with different filling factors. The asymmetry is obtained as a difference of two periods in the physical path length (Δ퐿=2푎) between the arms, and it was sufficient to produce a π phase shift in the region of operation around 휆=1500 nm. The asymmetric M-Z structure is more sensitive than a symmetric M-Z structure to changes in the refractive index and therefore becomes an interesting platform for switching and sensor devices.
6507-6510
Camargo, E A
b09e5729-444c-42a3-b633-97a6a6a9120a
Chong, H M H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De La Rue, R M
f172f931-c862-4a66-a3a4-731e362174da
2006
Camargo, E A
b09e5729-444c-42a3-b633-97a6a6a9120a
Chong, H M H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De La Rue, R M
f172f931-c862-4a66-a3a4-731e362174da
Camargo, E A, Chong, H M H and De La Rue, R M
(2006)
Highly compact asymmetric Mach-Zehnder device based on channel guides in 2D photonic crystal.
Applied Optics, 45 (25), .
(doi:10.1364/AO.45.006507).
Abstract
We have designed and fabricated a 2D photonic crystal (PhC) asymmetric Mach–Zehnder (M-Z) device structure using W1 channel waveguides oriented along Γ퐾 directions in silicon-on-insulator material. The asymmetric structure was designed using a PhC lattice with different filling factors. The asymmetry is obtained as a difference of two periods in the physical path length (Δ퐿=2푎) between the arms, and it was sufficient to produce a π phase shift in the region of operation around 휆=1500 nm. The asymmetric M-Z structure is more sensitive than a symmetric M-Z structure to changes in the refractive index and therefore becomes an interesting platform for switching and sensor devices.
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Published date: 2006
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 264897
URI: http://eprints.soton.ac.uk/id/eprint/264897
ISSN: 0003-6935
PURE UUID: 9123e5ab-61eb-4cea-ba83-6f42339dc6be
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Date deposited: 27 Nov 2007 09:32
Last modified: 15 Mar 2024 03:30
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Author:
E A Camargo
Author:
H M H Chong
Author:
R M De La Rue
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