Husain, M. K., Li, X. and de Groot, C. H. (2008) High quality Schottky contacts for limiting leakage currents in Ge based Schottky barrier MOSFETs. UK Semiconductors, Sheffield, United Kingdom. (In Press)
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Accepted/In Press date: 2 July 2008
Venue - Dates:
UK Semiconductors, Sheffield, United Kingdom, 2008-07-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266100
URI: http://eprints.soton.ac.uk/id/eprint/266100
PURE UUID: a8ab7f56-95c9-419a-8fde-eb99080474ef
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Date deposited: 10 Jul 2008 12:12
Last modified: 11 Dec 2021 03:43
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Contributors
Author:
M. K. Husain
Author:
X. Li
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