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High quality Schottky contacts for limiting leakage currents in Ge based Schottky barrier MOSFETs

High quality Schottky contacts for limiting leakage currents in Ge based Schottky barrier MOSFETs
High quality Schottky contacts for limiting leakage currents in Ge based Schottky barrier MOSFETs
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, X.
df4a6c0e-3b99-4c6a-9be4-ab53d0541c11
de Groot, C. H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, X.
df4a6c0e-3b99-4c6a-9be4-ab53d0541c11
de Groot, C. H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Husain, M. K., Li, X. and de Groot, C. H. (2008) High quality Schottky contacts for limiting leakage currents in Ge based Schottky barrier MOSFETs. UK Semiconductors, United Kingdom. (In Press)

Record type: Conference or Workshop Item (Other)

Full text not available from this repository.

More information

Accepted/In Press date: 2 July 2008
Venue - Dates: UK Semiconductors, United Kingdom, 2008-07-02
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266100
URI: http://eprints.soton.ac.uk/id/eprint/266100
PURE UUID: a8ab7f56-95c9-419a-8fde-eb99080474ef
ORCID for C. H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 10 Jul 2008 12:12
Last modified: 27 Feb 2019 01:34

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Contributors

Author: M. K. Husain
Author: X. Li
Author: C. H. de Groot ORCID iD

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