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Synthesis of assembled nanocrystalline Si dots film by the Langmuir–Blodgett technique

Synthesis of assembled nanocrystalline Si dots film by the Langmuir–Blodgett technique
Synthesis of assembled nanocrystalline Si dots film by the Langmuir–Blodgett technique
We report on a new bottom-up technique for forming silicon nanostructures based on the assembly of nanocrystalline Si (nc-Si) dots by the Langmuir–Blodgett technique. nc-Si dots with a diameter of 10±1 nm fabricated by a very high frequency (VHF) plasma process are dispersed in solvent and functionalized with an appropriate silane coupling agent. After compression at the surface of a Langmuir trough to form a well-organized two-dimensional array, nc-Si dots are transferred onto Si substrates. We have succeeded in forming a well-assembled nc-Si dot array with an area density of 7.33×1011 cm-2. Furthermore, we clarified what happens at the surface of a Langmuir trough based by analyzing surface pressure-area isotherms.
0021-4922
3731-3734
Tanaka, A.
baff8117-8be2-4dfd-a68b-6415e0929347
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Usami, K.
f506146b-9864-482a-bc61-1de94522d32c
Saito, S.
5a819d3c-9621-43ed-83a3-d326c2575e57
Arai, T.
7f53022e-dbb2-4eda-b354-71662925bb30
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Tanaka, A.
baff8117-8be2-4dfd-a68b-6415e0929347
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Usami, K.
f506146b-9864-482a-bc61-1de94522d32c
Saito, S.
5a819d3c-9621-43ed-83a3-d326c2575e57
Arai, T.
7f53022e-dbb2-4eda-b354-71662925bb30
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Saito, S., Arai, T., Mizuta, Hiroshi and Oda, S. (2008) Synthesis of assembled nanocrystalline Si dots film by the Langmuir–Blodgett technique. Japanese Journal of Applied Physics, 47, 3731-3734. (doi:10.1143/JJAP.47.3731).

Record type: Article

Abstract

We report on a new bottom-up technique for forming silicon nanostructures based on the assembly of nanocrystalline Si (nc-Si) dots by the Langmuir–Blodgett technique. nc-Si dots with a diameter of 10±1 nm fabricated by a very high frequency (VHF) plasma process are dispersed in solvent and functionalized with an appropriate silane coupling agent. After compression at the surface of a Langmuir trough to form a well-organized two-dimensional array, nc-Si dots are transferred onto Si substrates. We have succeeded in forming a well-assembled nc-Si dot array with an area density of 7.33×1011 cm-2. Furthermore, we clarified what happens at the surface of a Langmuir trough based by analyzing surface pressure-area isotherms.

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Published date: 2008
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266169
URI: http://eprints.soton.ac.uk/id/eprint/266169
ISSN: 0021-4922
PURE UUID: 56d57c07-2fed-46a2-9601-5cec54055757

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Date deposited: 21 Jul 2008 14:34
Last modified: 27 Jul 2022 16:36

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Contributors

Author: A. Tanaka
Author: Yoshishige Tsuchiya
Author: K. Usami
Author: S. Saito
Author: T. Arai
Author: Hiroshi Mizuta
Author: S. Oda

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