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Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states

Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states
Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states
103-106
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Mizuta, Hiroshi (1998) Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states. VLSI DESIGN, 6, 103-106.

Record type: Article
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Published date: 1998
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266232
URI: https://eprints.soton.ac.uk/id/eprint/266232
PURE UUID: eff021a3-cf9d-40a6-a613-f64cc9dd788b

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Date deposited: 22 Jul 2008 10:01
Last modified: 18 Jul 2017 07:19

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Author: Hiroshi Mizuta

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