Variable-area resonant tunneling diodes using implanted in-plane gates
Variable-area resonant tunneling diodes using implanted in-plane gates
1276-1286
Goodings, C. J.
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Mizuta, Hiroshi
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Cleaver, J. R. A.
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Ahmed, H.
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1994
Goodings, C. J.
d097f31c-5e51-43a8-8809-0d681ba4a934
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Cleaver, J. R. A.
c552937c-6985-41f4-9454-79be139e1413
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Goodings, C. J., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H.
(1994)
Variable-area resonant tunneling diodes using implanted in-plane gates.
Journal of Applied Physics, 76, .
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Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266237
URI: http://eprints.soton.ac.uk/id/eprint/266237
ISSN: 0021-8979
PURE UUID: a39b74b2-bfbf-47f8-ba96-98d8dd87cbcc
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Date deposited: 22 Jul 2008 10:13
Last modified: 14 Mar 2024 08:23
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Contributors
Author:
C. J. Goodings
Author:
Hiroshi Mizuta
Author:
J. R. A. Cleaver
Author:
H. Ahmed
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