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Variable-area resonant tunneling diodes using implanted in-plane gates

Variable-area resonant tunneling diodes using implanted in-plane gates
Variable-area resonant tunneling diodes using implanted in-plane gates
0021-8979
1276-1286
Goodings, C. J.
d097f31c-5e51-43a8-8809-0d681ba4a934
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Cleaver, J. R. A.
c552937c-6985-41f4-9454-79be139e1413
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Goodings, C. J.
d097f31c-5e51-43a8-8809-0d681ba4a934
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Cleaver, J. R. A.
c552937c-6985-41f4-9454-79be139e1413
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf

Goodings, C. J., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1994) Variable-area resonant tunneling diodes using implanted in-plane gates. Journal of Applied Physics, 76, 1276-1286.

Record type: Article
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Published date: 1994
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266237
URI: https://eprints.soton.ac.uk/id/eprint/266237
ISSN: 0021-8979
PURE UUID: a39b74b2-bfbf-47f8-ba96-98d8dd87cbcc

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Date deposited: 22 Jul 2008 10:13
Last modified: 18 Jul 2017 07:18

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