Ohkura, Y., Mizuta, Hiroshi, Ohbu, I., Kagaya, O., Katayama, K. and Ihara, S. (1994) The electron mobility transition in n-GaAs heavily doped channel. Semiconductor Science and Technology, 9, 811-814.
Record type:
Article
More information
Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266238
URI: http://eprints.soton.ac.uk/id/eprint/266238
ISSN: 0268-1242
PURE UUID: 84e86bc6-c4ec-45dc-a7bb-78592686c7fc
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Date deposited: 22 Jul 2008 10:15
Last modified: 14 Mar 2024 08:23
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Contributors
Author:
Y. Ohkura
Author:
Hiroshi Mizuta
Author:
I. Ohbu
Author:
O. Kagaya
Author:
K. Katayama
Author:
S. Ihara
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