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The electron mobility transition in n-GaAs heavily doped channel

Ohkura, Y., Mizuta, Hiroshi, Ohbu, I., Kagaya, O., Katayama, K. and Ihara, S. (1994) The electron mobility transition in n-GaAs heavily doped channel Semiconductor Science and Technology, 9, pp. 811-814.

Record type: Article
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Published date: 1994
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 266238
ISSN: 0268-1242
PURE UUID: 84e86bc6-c4ec-45dc-a7bb-78592686c7fc

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Date deposited: 22 Jul 2008 10:15
Last modified: 18 Jul 2017 07:18

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Author: Y. Ohkura
Author: Hiroshi Mizuta
Author: I. Ohbu
Author: O. Kagaya
Author: K. Katayama
Author: S. Ihara

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