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Time dependence of the surface Fermi level of GaAs in atmosphere

Time dependence of the surface Fermi level of GaAs in atmosphere
Time dependence of the surface Fermi level of GaAs in atmosphere
This letter reports the time dependence of the surface Fermi level of GaAs grown by molecular‐beam epitaxy and then exposed to atmosphere. The sheet resistance of sample structures for field effect transistors alternately increased, decreased, increased, and decreased to become nearly constant after about 500 h. These changes correspond to the surface Fermi level varying between 0.3 and 0.7 eV and finally settling 0.7 eV above the valence band maximum. Comparison between annealed and unannealed samples with low‐temperature‐grown GaAs layers showed that the pinning of the surface Fermi level at 0.7 eV above the valence band maximum is caused by arsenic antisite defects. The result supports the advanced unified defect model.
0003-6951
3279-3281
Ohbu, I.
9b897ac6-3fd6-454b-9665-64cab7466581
Takahama, M.
e9ba5143-e987-4261-bef3-180b8f9a2811
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Ohbu, I.
9b897ac6-3fd6-454b-9665-64cab7466581
Takahama, M.
e9ba5143-e987-4261-bef3-180b8f9a2811
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Ohbu, I., Takahama, M. and Mizuta, Hiroshi (1993) Time dependence of the surface Fermi level of GaAs in atmosphere. Applied Physics Letters, 62 (25), 3279-3281. (doi:10.1063/1.109099).

Record type: Article

Abstract

This letter reports the time dependence of the surface Fermi level of GaAs grown by molecular‐beam epitaxy and then exposed to atmosphere. The sheet resistance of sample structures for field effect transistors alternately increased, decreased, increased, and decreased to become nearly constant after about 500 h. These changes correspond to the surface Fermi level varying between 0.3 and 0.7 eV and finally settling 0.7 eV above the valence band maximum. Comparison between annealed and unannealed samples with low‐temperature‐grown GaAs layers showed that the pinning of the surface Fermi level at 0.7 eV above the valence band maximum is caused by arsenic antisite defects. The result supports the advanced unified defect model.

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Published date: March 1993
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266239
URI: https://eprints.soton.ac.uk/id/eprint/266239
ISSN: 0003-6951
PURE UUID: 8b0dd281-2095-4ce0-ba13-ff934b133ec4

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Date deposited: 22 Jul 2008 10:17
Last modified: 14 Dec 2018 17:31

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