The University of Southampton
University of Southampton Institutional Repository

Coherent-electron intrinsic multistability in a double-barrier tunnelling diode

Coherent-electron intrinsic multistability in a double-barrier tunnelling diode
Coherent-electron intrinsic multistability in a double-barrier tunnelling diode
Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling devices was proposed. The reflection of coherent electrons at a barrier leads to the formation of resonant states in a quantum well in front of the barrier, and the resulting strongly modulated local density of states allows for multiple stable solutions of the Poisson equation to exist at fixed bias. These solutions are characterized by different resonant states being pinned close to the conduction-band edge, with each solution having its own unique tunneling characteristics. Here we show how these multiple-branch I(v) characteristics can be engineered. This approach may open up new possibilities for high-speed functional devices.
0003-6951
2268-2270
Wagner, M.
8dc45aa5-e216-4c0c-a807-090a01e2d1b1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Wagner, M.
8dc45aa5-e216-4c0c-a807-090a01e2d1b1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Wagner, M. and Mizuta, Hiroshi (1993) Coherent-electron intrinsic multistability in a double-barrier tunnelling diode. Applied Physics Letters, 63 (16), 2268-2270. (doi:10.1063/1.110525).

Record type: Article

Abstract

Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling devices was proposed. The reflection of coherent electrons at a barrier leads to the formation of resonant states in a quantum well in front of the barrier, and the resulting strongly modulated local density of states allows for multiple stable solutions of the Poisson equation to exist at fixed bias. These solutions are characterized by different resonant states being pinned close to the conduction-band edge, with each solution having its own unique tunneling characteristics. Here we show how these multiple-branch I(v) characteristics can be engineered. This approach may open up new possibilities for high-speed functional devices.

Text
paper_16.pdf - Other
Download (434kB)

More information

Published date: 1993
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266241
URI: https://eprints.soton.ac.uk/id/eprint/266241
ISSN: 0003-6951
PURE UUID: 7dc82580-4391-4507-82a9-372bb1dc9481

Catalogue record

Date deposited: 22 Jul 2008 10:24
Last modified: 14 Dec 2018 17:31

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×