Hiruma, K., Mori, M., Yanakura, E., Mizuta, Hiroshi and Takahashi, S. (1989) Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy. IEEE Transactions on Electron Devices, ED-36, 314-318.
Record type:
Article
More information
Published date: 1989
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266248
URI: http://eprints.soton.ac.uk/id/eprint/266248
PURE UUID: 23ab7433-d613-4fba-9940-47695511ad84
Catalogue record
Date deposited: 22 Jul 2008 10:47
Last modified: 14 Mar 2024 08:23
Export record
Contributors
Author:
K. Hiruma
Author:
M. Mori
Author:
E. Yanakura
Author:
Hiroshi Mizuta
Author:
S. Takahashi
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.