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Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy

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Citation

Hiruma, K., Mori, M., Yanakura, E., Mizuta, Hiroshi and Takahashi, S. (1989) Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy IEEE Transactions on Electron Devices, ED-36, pp. 314-318.

More information

Published date: 1989
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266248
URI: http://eprints.soton.ac.uk/id/eprint/266248
PURE UUID: 23ab7433-d613-4fba-9940-47695511ad84

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Date deposited: 22 Jul 2008 10:47
Last modified: 18 Jul 2017 07:18

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Contributors

Author: K. Hiruma
Author: M. Mori
Author: E. Yanakura
Author: Hiroshi Mizuta
Author: S. Takahashi

University divisions


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