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Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy

Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy
Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy
314-318
Hiruma, K.
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Mori, M.
cde93352-8d35-4627-9dff-52981bad5e0c
Yanakura, E.
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Mizuta, Hiroshi
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Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Hiruma, K.
d22958c5-8c54-4cfa-9b21-d1b920f8ae25
Mori, M.
cde93352-8d35-4627-9dff-52981bad5e0c
Yanakura, E.
7a49045f-4a46-4439-90a8-9d2e52165c8c
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e

Hiruma, K., Mori, M., Yanakura, E., Mizuta, Hiroshi and Takahashi, S. (1989) Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy. IEEE Transactions on Electron Devices, ED-36, 314-318.

Record type: Article
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Published date: 1989
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266248
URI: https://eprints.soton.ac.uk/id/eprint/266248
PURE UUID: 23ab7433-d613-4fba-9940-47695511ad84

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Date deposited: 22 Jul 2008 10:47
Last modified: 24 Oct 2017 16:31

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