Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy


Hiruma, K., Mori, M., Yanakura, E., Mizuta, Hiroshi and Takahashi, S. (1989) Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy IEEE Transactions on Electron Devices, ED-36, pp. 314-318.

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Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 266248
Date :
Date Event
1989Published
Date Deposited: 22 Jul 2008 10:47
Last Modified: 17 Apr 2017 19:06
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266248

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