Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates
Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates
363-368
Goodings, C.J.
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Mizuta, Hiroshi
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Cleaver, J.R.A.
19303891-8463-4930-a5b7-bf04ca5a471c
Ahmed, H.
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1994
Goodings, C.J.
e59e5a35-2189-4b27-b3f2-2096084b585f
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Cleaver, J.R.A.
19303891-8463-4930-a5b7-bf04ca5a471c
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Goodings, C.J., Mizuta, Hiroshi, Cleaver, J.R.A. and Ahmed, H.
(1994)
Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates.
Surface Science, 305, .
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Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266255
URI: http://eprints.soton.ac.uk/id/eprint/266255
ISSN: 0039-6028
PURE UUID: cd95fa51-0ba1-4dbf-97e4-dd6fa4429552
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Date deposited: 22 Jul 2008 14:47
Last modified: 14 Mar 2024 08:24
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Contributors
Author:
C.J. Goodings
Author:
Hiroshi Mizuta
Author:
J.R.A. Cleaver
Author:
H. Ahmed
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