Kamiya, T., Durrani, Z. A. K., Ahmed, H,, Sameshima, T., Furuta, Y., Mizuta, Hiroshi and Lloyd, N. (2003) Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 21, 1000-1003.
Record type:
Article
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Published date: 2003
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266256
URI: http://eprints.soton.ac.uk/id/eprint/266256
ISSN: 0734-211X
PURE UUID: bb3d24fb-84f7-4fb8-a296-c7a8a115e7b5
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Date deposited: 22 Jul 2008 14:51
Last modified: 14 Mar 2024 08:24
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Contributors
Author:
T. Kamiya
Author:
Z. A. K. Durrani
Author:
H, Ahmed
Author:
T. Sameshima
Author:
Y. Furuta
Author:
Hiroshi Mizuta
Author:
N. Lloyd
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