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Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices

Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices
Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices
0734-211X
1000-1003
Kamiya, T.
d52831ff-3dba-4d58-abd2-55958ebade6e
Durrani, Z. A. K.
18f7df81-696b-4e8c-b365-c783563920c4
Ahmed, H,
b8c64b96-b320-41c3-907b-24883e82cd76
Sameshima, T.
9c92a08c-ac76-4340-8fe6-0e3a75a25b57
Furuta, Y.
2b3632d6-4ef3-4bce-a686-0e0973b35dcd
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Lloyd, N.
d1a775da-d959-4619-997b-1ca076f2061e
Kamiya, T.
d52831ff-3dba-4d58-abd2-55958ebade6e
Durrani, Z. A. K.
18f7df81-696b-4e8c-b365-c783563920c4
Ahmed, H,
b8c64b96-b320-41c3-907b-24883e82cd76
Sameshima, T.
9c92a08c-ac76-4340-8fe6-0e3a75a25b57
Furuta, Y.
2b3632d6-4ef3-4bce-a686-0e0973b35dcd
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Lloyd, N.
d1a775da-d959-4619-997b-1ca076f2061e

Kamiya, T., Durrani, Z. A. K., Ahmed, H,, Sameshima, T., Furuta, Y., Mizuta, Hiroshi and Lloyd, N. (2003) Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 21, 1000-1003.

Record type: Article
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Published date: 2003
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266256
URI: http://eprints.soton.ac.uk/id/eprint/266256
ISSN: 0734-211X
PURE UUID: bb3d24fb-84f7-4fb8-a296-c7a8a115e7b5

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Date deposited: 22 Jul 2008 14:51
Last modified: 02 Dec 2019 21:02

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