P-type Si nanocrystal thin-film transistors

Zhou, Xin, Rafiq, M.A., Mizuta, H. and Oda, S. (2008) P-type Si nanocrystal thin-film transistors. In Proceedings of the 2008 IEEE Silicon Nanoelectronics Workshop. IEEE. 2 pp . (doi:10.1109/SNW.2008.5418428).

Abstract

Silicon nanocrystals with the size of a few nanometers have been proposed for many applications, including single-electron transistors, Si-based light emitting devices and electron emitters, due to novel electronics and optical properties. However, considering fabrication process of nanocrystals, large variable spacing of the nearest-neighbor nanocrystals maintained by insulator materials and nanocrystal size cause the number of current paths in lateral direction much smaller than in vertical direction. Thus, most previous researches met a problem of poor conductivity in lateral direction. Thin-film transistors (TFTs), which are key elements of low cost large area electronic application, have been successfully fabricated based on microcrystalline and polycrystalline silicon. However, there is little work concerning Si nanocrystal TFTs. In this paper, we present p-type thin-film transistors based on size-controlled Si nanocrystals dispersed on SiO₂ matrix. We demonstrate that the influence of Al/Si nanocrystals contacts on thin film transistor characteristics.

This record has no associated files available for download.

Contributors

Download statistics