Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot
Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot
pp 180-181
Surawajiya, A.
be68f364-3c78-4747-a8d7-51d895a67ee8
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
September 2005
Surawajiya, A.
be68f364-3c78-4747-a8d7-51d895a67ee8
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Surawajiya, A., Mizuta, Hiroshi and Oda, S.
(2005)
Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot.
2005 International Conference on Solid State Devices and Materials, Kobe, Japan.
12 - 15 Sep 2005.
.
Record type:
Conference or Workshop Item
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Text
cpaper_107.pdf
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More information
Published date: September 2005
Additional Information:
Event Dates: September 2005
Venue - Dates:
2005 International Conference on Solid State Devices and Materials, Kobe, Japan, 2005-09-12 - 2005-09-15
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266307
URI: http://eprints.soton.ac.uk/id/eprint/266307
PURE UUID: c2c72cc6-7a3e-40f2-b554-f99a3c666148
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Date deposited: 23 Jul 2008 10:58
Last modified: 14 Mar 2024 08:26
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Contributors
Author:
A. Surawajiya
Author:
Hiroshi Mizuta
Author:
S. Oda
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