Huang, S., Mizuta, Hiroshi and Oda, S. (2005) Charge operation of nitrided nanocrystalline silicon dot memory devices. China International Conference on Nanoscience and Technology, Beijing.
Record type:
Conference or Workshop Item
(Other)
More information
Published date: June 2005
Additional Information:
Event Dates: June 2005
Venue - Dates:
China International Conference on Nanoscience and Technology, Beijing, 2005-06-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266314
URI: http://eprints.soton.ac.uk/id/eprint/266314
PURE UUID: 2534caf4-cddf-465a-b8f1-16758ab81ef9
Catalogue record
Date deposited: 23 Jul 2008 11:15
Last modified: 14 Mar 2024 08:25
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Contributors
Author:
S. Huang
Author:
Hiroshi Mizuta
Author:
S. Oda
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