Fujita, H., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD. 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, Tokyo.
Record type:
Conference or Workshop Item
(Other)
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Published date: May 2004
Additional Information:
Event Dates: May 2004
Venue - Dates:
2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, Tokyo, 2004-05-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266336
URI: http://eprints.soton.ac.uk/id/eprint/266336
PURE UUID: 507fc116-b177-46c7-9061-170cd52bea98
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Date deposited: 25 Jul 2008 08:29
Last modified: 14 Mar 2024 08:26
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Contributors
Author:
H. Fujita
Author:
Yoshishige Tsuchiya
Author:
Hiroshi Mizuta
Author:
H. Nohira
Author:
T. Hattori
Author:
S. Oda
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