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Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD

Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD
Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD
Fujita, H.
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Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nohira, H.
79e58176-2227-4989-bf1a-c03f07764e15
Hattori, T.
03686cfe-2164-450c-8a3c-735d1509ac94
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Fujita, H.
26316f23-b687-4849-875b-3f8180761e1d
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nohira, H.
79e58176-2227-4989-bf1a-c03f07764e15
Hattori, T.
03686cfe-2164-450c-8a3c-735d1509ac94
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde

Fujita, H., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD. 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, Tokyo.

Record type: Conference or Workshop Item (Other)
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cpaper_086.pdf - Other
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More information

Published date: May 2004
Additional Information: Event Dates: May 2004
Venue - Dates: 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, Tokyo, 2004-04-30
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266336
URI: http://eprints.soton.ac.uk/id/eprint/266336
PURE UUID: 507fc116-b177-46c7-9061-170cd52bea98

Catalogue record

Date deposited: 25 Jul 2008 08:29
Last modified: 20 Nov 2021 08:35

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Contributors

Author: H. Fujita
Author: Yoshishige Tsuchiya
Author: Hiroshi Mizuta
Author: H. Nohira
Author: T. Hattori
Author: S. Oda

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