Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD


Fujita, H., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD At 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology.

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Item Type: Conference or Workshop Item (Other)
Additional Information: Event Dates: May 2004
Venue - Dates: 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, 2004-05-01
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 266336
Date :
Date Event
May 2004Published
Date Deposited: 25 Jul 2008 08:29
Last Modified: 17 Apr 2017 19:04
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266336

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