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Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD

Fujita, H., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD At 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology.

Record type: Conference or Workshop Item (Other)
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Published date: May 2004
Additional Information: Event Dates: May 2004
Venue - Dates: 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, 2004-05-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266336
URI: http://eprints.soton.ac.uk/id/eprint/266336
PURE UUID: 507fc116-b177-46c7-9061-170cd52bea98

Catalogue record

Date deposited: 25 Jul 2008 08:29
Last modified: 18 Jul 2017 07:17

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Contributors

Author: H. Fujita
Author: Yoshishige Tsuchiya
Author: Hiroshi Mizuta
Author: H. Nohira
Author: T. Hattori
Author: S. Oda

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