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Study of charge quantization in individual silicon quantum dots using Kelvin probe Force Microscopy

Study of charge quantization in individual silicon quantum dots using Kelvin probe Force Microscopy
Study of charge quantization in individual silicon quantum dots using Kelvin probe Force Microscopy
pp 884-885
Salem, M. A.
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Tsuchiya, Yoshishige
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Usami, K.
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Mizuta, Hiroshi
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Oda, S.
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Salem, M. A.
8d5d6e2b-c597-4642-98e7-74fc7f83ce98
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Usami, K.
f506146b-9864-482a-bc61-1de94522d32c
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde

Salem, M. A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2004) Study of charge quantization in individual silicon quantum dots using Kelvin probe Force Microscopy. the 2004 International Conference on Solid State Devices and Materials, Tokyo. pp 884-885 .

Record type: Conference or Workshop Item (Other)
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cpaper_084.pdf - Other
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More information

Published date: September 2004
Additional Information: Event Dates: September 2004
Venue - Dates: the 2004 International Conference on Solid State Devices and Materials, Tokyo, 2004-08-31
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266338
URI: http://eprints.soton.ac.uk/id/eprint/266338
PURE UUID: a1f021a5-a9d5-4a7d-a3ad-cd1e01b5fed9

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Date deposited: 25 Jul 2008 08:34
Last modified: 20 Nov 2021 08:35

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Contributors

Author: M. A. Salem
Author: Yoshishige Tsuchiya
Author: K. Usami
Author: Hiroshi Mizuta
Author: S. Oda

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