Electron Energy Loss Behavior in Si Quantum Dots Interconnected with Tunnel Oxide Barriers
Electron Energy Loss Behavior in Si Quantum Dots Interconnected with Tunnel Oxide Barriers
pp 121-122
Uno, S.
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Mori, N.
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Nakazato, K.
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Koshida, N.
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Mizuta, Hiroshi
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June 2004
Uno, S.
ad5d0b8f-4180-46db-b7e8-4d38c4d0bc61
Mori, N.
5909cd97-a3bb-4da9-877c-dc2f368e06dd
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Koshida, N.
4dfd7d69-bba7-4a07-b428-97f917dc1a15
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Uno, S., Mori, N., Nakazato, K., Koshida, N. and Mizuta, Hiroshi
(2004)
Electron Energy Loss Behavior in Si Quantum Dots Interconnected with Tunnel Oxide Barriers.
2004 Silicon Nanoelectronics Workshop, Honolulu.
.
Record type:
Conference or Workshop Item
(Poster)
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cpaper_073.pdf
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Published date: June 2004
Additional Information:
Event Dates: June 2004
Venue - Dates:
2004 Silicon Nanoelectronics Workshop, Honolulu, 2004-06-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266347
URI: http://eprints.soton.ac.uk/id/eprint/266347
PURE UUID: a738595c-30f0-4d8a-a38b-f06c88a01e2c
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Date deposited: 25 Jul 2008 09:01
Last modified: 14 Mar 2024 08:27
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Contributors
Author:
S. Uno
Author:
N. Mori
Author:
K. Nakazato
Author:
N. Koshida
Author:
Hiroshi Mizuta
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