A surface-potential-based cylindrical surrounding-gate MOSFET model
A surface-potential-based cylindrical surrounding-gate MOSFET model
Amakawa, S.
d65565fd-9b06-477d-a58d-07ace5271ea5
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
16 September 2003
Amakawa, S.
d65565fd-9b06-477d-a58d-07ace5271ea5
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Amakawa, S., Nakazato, K. and Mizuta, Hiroshi
(2003)
A surface-potential-based cylindrical surrounding-gate MOSFET model.
2003 International Conference on Solid State Devices and Materials, Tokyo.
16 - 18 Sep 2003.
Record type:
Conference or Workshop Item
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cpaper_067.pdf
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More information
Published date: 16 September 2003
Additional Information:
Event Dates: 16-18 September 2003
Venue - Dates:
2003 International Conference on Solid State Devices and Materials, Tokyo, 2003-09-16 - 2003-09-18
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266353
URI: http://eprints.soton.ac.uk/id/eprint/266353
PURE UUID: 6f59e1df-2e88-41ea-84dd-77d6216cc325
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Date deposited: 25 Jul 2008 09:15
Last modified: 14 Mar 2024 08:27
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Contributors
Author:
S. Amakawa
Author:
K. Nakazato
Author:
Hiroshi Mizuta
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