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Characterization of tunnel-barriers in polycrystalline Si point-contact single-electron transistors

Characterization of tunnel-barriers in polycrystalline Si point-contact single-electron transistors
Characterization of tunnel-barriers in polycrystalline Si point-contact single-electron transistors
Furuta, Y.
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Mizuta, Hiroshi
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Nakazato, K.
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Kamiya, T.
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Tan, Y. T.
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Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
Taniguchi, K.
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Furuta, Y.
2b3632d6-4ef3-4bce-a686-0e0973b35dcd
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Kamiya, T.
d52831ff-3dba-4d58-abd2-55958ebade6e
Tan, Y. T.
2a1d615d-e201-4488-8eaf-c8bef61d68aa
Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
Taniguchi, K.
9e6a93cb-1569-4d99-8507-9b227531c39b

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Kamiya, T., Tan, Y. T., Durrani, Z. A. K. and Taniguchi, K. (2001) Characterization of tunnel-barriers in polycrystalline Si point-contact single-electron transistors. 2001 International Conference on Solid State Devices and Materials, Tokyo.

Record type: Conference or Workshop Item (Poster)
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More information

Published date: September 2001
Additional Information: Event Dates: September 2001
Venue - Dates: 2001 International Conference on Solid State Devices and Materials, Tokyo, 2001-09-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266380
URI: http://eprints.soton.ac.uk/id/eprint/266380
PURE UUID: be51f673-6115-4102-bfa2-ace6cbd50532

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Date deposited: 28 Jul 2008 08:25
Last modified: 14 Mar 2024 08:28

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Contributors

Author: Y. Furuta
Author: Hiroshi Mizuta
Author: K. Nakazato
Author: T. Kamiya
Author: Y. T. Tan
Author: Z. A. K. Durrani
Author: K. Taniguchi

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