Phase-state Low Electron-number Drive Random Access Memory (PLEDM)
Phase-state Low Electron-number Drive Random Access Memory (PLEDM)
pp 132-133
Nakazato, K.
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Itoh, K.
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Ahmed, H.
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Mizuta, Hiroshi
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Kisu, T.
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Kato, M.
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Sakata, T.
ccadb3cf-a83d-4803-8b17-b225179e6eaa
March 2000
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Itoh, K.
4ecd900d-dc64-4bb9-aeb6-08b18589563e
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Kisu, T.
560de508-747f-466b-b7b9-584f3f482dd1
Kato, M.
50e5cf3b-7921-45d2-b40d-b167b923487a
Sakata, T.
ccadb3cf-a83d-4803-8b17-b225179e6eaa
Nakazato, K., Itoh, K., Ahmed, H., Mizuta, Hiroshi, Kisu, T., Kato, M. and Sakata, T.
(2000)
Phase-state Low Electron-number Drive Random Access Memory (PLEDM).
IEEE International Solid-State Circuit Conference, San Francisco.
.
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Published date: March 2000
Additional Information:
(solicited paper) Event Dates: February 2001
Venue - Dates:
IEEE International Solid-State Circuit Conference, San Francisco, 2001-02-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266385
URI: http://eprints.soton.ac.uk/id/eprint/266385
PURE UUID: b2bff169-9833-421b-98f7-e7f2e98d0c07
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Date deposited: 28 Jul 2008 08:43
Last modified: 14 Mar 2024 08:27
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Contributors
Author:
K. Nakazato
Author:
K. Itoh
Author:
H. Ahmed
Author:
Hiroshi Mizuta
Author:
T. Kisu
Author:
M. Kato
Author:
T. Sakata
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