Evans, G., Mizuta, Hiroshi and Ahmed, H. (2000) Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution. 6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Enshede.
Record type:
Conference or Workshop Item
(Poster)
More information
Published date: June 2000
Additional Information:
Event Dates: June 2000
Venue - Dates:
6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Enshede, 2000-06-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266386
URI: http://eprints.soton.ac.uk/id/eprint/266386
PURE UUID: 6cbde2ef-1e8a-44ef-bc4e-7e05d0d55367
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Date deposited: 28 Jul 2008 08:45
Last modified: 14 Mar 2024 08:27
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Contributors
Author:
G. Evans
Author:
Hiroshi Mizuta
Author:
H. Ahmed
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