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Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution

Record type: Conference or Workshop Item (Poster)
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Citation

Evans, G., Mizuta, Hiroshi and Ahmed, H. (2000) Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution At 6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics.

More information

Published date: June 2000
Additional Information: Event Dates: June 2000
Venue - Dates: 6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, 2000-06-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266386
URI: http://eprints.soton.ac.uk/id/eprint/266386
PURE UUID: 6cbde2ef-1e8a-44ef-bc4e-7e05d0d55367

Catalogue record

Date deposited: 28 Jul 2008 08:45
Last modified: 18 Jul 2017 07:16

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Contributors

Author: G. Evans
Author: Hiroshi Mizuta
Author: H. Ahmed

University divisions


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