A fast three-dimensional MC simulator for tunneling diodes
A fast three-dimensional MC simulator for tunneling diodes
pp 31-33
Wagner, M.
8dc45aa5-e216-4c0c-a807-090a01e2d1b1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
November 2000
Wagner, M.
8dc45aa5-e216-4c0c-a807-090a01e2d1b1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Wagner, M., Mizuta, Hiroshi and Nakazato, K.
(2000)
A fast three-dimensional MC simulator for tunneling diodes.
2000 International Conference on Simulation of Semiconductor Processes and Devices, Seattle.
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Published date: November 2000
Additional Information:
Event Dates: September 2000
Venue - Dates:
2000 International Conference on Simulation of Semiconductor Processes and Devices, Seattle, 2000-08-31
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266408
URI: http://eprints.soton.ac.uk/id/eprint/266408
PURE UUID: 65ee7337-7e9f-487e-b6fb-335b9228b4b7
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Date deposited: 30 Jul 2008 08:36
Last modified: 07 Jan 2022 21:16
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Contributors
Author:
M. Wagner
Author:
Hiroshi Mizuta
Author:
K. Nakazato
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