Simulation of single electron multiple tunnel junctions in CMOS environment
Simulation of single electron multiple tunnel junctions in CMOS environment
Muller, H. -O.
0cde81c2-c635-4e6d-b578-419f228a01d5
Williams, D.
bcbcd58d-a02f-414c-8d2a-b1b05fead720
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
July 1999
Muller, H. -O.
0cde81c2-c635-4e6d-b578-419f228a01d5
Williams, D.
bcbcd58d-a02f-414c-8d2a-b1b05fead720
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Muller, H. -O., Williams, D. and Mizuta, Hiroshi
(1999)
Simulation of single electron multiple tunnel junctions in CMOS environment.
4th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Duisberg.
Record type:
Conference or Workshop Item
(Poster)
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Published date: July 1999
Additional Information:
Event Dates: July 1999
Venue - Dates:
4th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Duisberg, 1999-06-30
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266413
URI: http://eprints.soton.ac.uk/id/eprint/266413
PURE UUID: eb9f0cad-3542-411f-bca0-89db1c20dab6
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Date deposited: 30 Jul 2008 08:54
Last modified: 10 Dec 2021 22:17
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Contributors
Author:
H. -O. Muller
Author:
D. Williams
Author:
Hiroshi Mizuta
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