Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates
Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates
Goodings, C.
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Mizuta, Hiroshi
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Cleaver, J. R. A.
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Ahmed, H.
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July 1993
Goodings, C.
41a3c0bd-9b15-4f8c-9d93-7867cbd9723d
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Cleaver, J. R. A.
c552937c-6985-41f4-9454-79be139e1413
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Goodings, C., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H.
(1993)
Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates.
The 10th International Conference on Electronic Properties of Two-Dimensional Systems, Newport.
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Published date: July 1993
Additional Information:
Event Dates: June 1993
Venue - Dates:
The 10th International Conference on Electronic Properties of Two-Dimensional Systems, Newport, 1993-05-31
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266429
URI: http://eprints.soton.ac.uk/id/eprint/266429
PURE UUID: 7416d496-cada-499b-ae2b-796200df22f8
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Date deposited: 30 Jul 2008 09:37
Last modified: 10 Dec 2021 22:17
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Contributors
Author:
C. Goodings
Author:
Hiroshi Mizuta
Author:
J. R. A. Cleaver
Author:
H. Ahmed
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